الوصف
- Transistor Configuration: Single
- Configuration: Single
- Maximum Continuous Collector Current: 232 A
- Maximum Collector Emitter Voltage: 1200 V
- Maximum Gate Emitter Voltage: ±20V
SEMIKRONSKM150GAL12T4 IGBT Array & Module Transistor, NPN, 232 A, 1.8 V, 1.2 kV, Module