Size:Small 1. overall size: 4mm*4.3mm. 2. Line Width: 5um, line space: 3um. 3. Electrode substrate is monocrystalline silicon with 300nm thickness of SiO2 on the surface of the silicon wafer. 4. Conductor layer structure: Cr/Au, the thickness are10nm and 100nm respectively. 5. The suitable temperature for using is from - 100 degrees Celsius to +400 degrees Celsius. 6.This high precision silicon interdigital electrode is widely used in chemical, physical and medical sensors, with reliable performance and stable quality!
ترست بايلوت
منذ أسبوعين
منذ يوم واحد
